Open czochralski furnace for single crystal growth

ABSTRACT

The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.17/451,844 filed on Oct. 22, 2021, which is a Continuation of U.S.application Ser. No. 17/035,741 (U.S. Pat. No. 11,155,930) filed on Sep.29, 2020, which is a Continuation of U.S. application Ser. No.16/903,326 (U.S. Pat. No. 10,844,514) filed on Jun. 16, 2020, which is aContinuation of International Application No. PCT/CN2019/101698 filed onAug. 21, 2019, the entire contents of which are hereby incorporated byreference.

TECHNICAL FIELD

The present disclosure generally relates to the technical field of thegrowth of high-temperature oxide single crystal material, and inparticular, to an apparatus for crystal growth.

BACKGROUND

The single crystal furnace is a special apparatus for preparingartificial crystals such as silicon, germanium, gallium arsenide, YAG(yttrium aluminum garnet), LSO (lutetium oxyorthosilicate), which is acomprehensive system integrating mechanic, electric, computer,aerodynamic, fluid power, thermodynamics, or other disciplines.Currently, the high-temperature crystal growth apparatus using theCzochralski technique mainly works in a closed environment (vacuumfurnace) with a relatively high vacuum and pressure. However, since thestructure of the vacuum furnace is complex and the vacuum environment isdifficult to control, improper operations may cause the furnace bodyexploded, thereby causing great safety hazards to production. Therefore,the present disclosure provides an open crystal growth apparatus.

SUMMARY

One embodiment of the present disclosure provides an apparatus forcrystal growth. The apparatus may include a furnace chamber. The furnacechamber may include a furnace body and a furnace cover. The furnacecover may be mounted on a top of the furnace body. The furnace cover mayinclude a first through hole. The first through hole may be configuredto place a temperature field device.

In some embodiments, a cooling structure may be mounted on a sidewall ofthe furnace body and the furnace cover.

In some embodiments, the cooling structure mounted on the furnace covermay include at least one circle of square copper tube. A cooling mediummay pass through the square copper tube.

In some embodiments, the temperature field device may include a sealingdrum, a cover plate mounted on a top of the sealing drum, and a bottomplate mounted on a bottom of the sealing drum. The cover plate mayinclude a second through hole. The apparatus may further include afurnace frame. The furnace chamber may be mounted on the furnace frame.The apparatus may further include a pulling rod component that passesthrough the second through hole and extends into the temperature fielddevice. The apparatus may further include a heater mounted between thefurnace chamber and the temperature field device.

In some embodiments, the apparatus may further include a pullingcomponent configured to drive the pulling rod component to move up anddown and a rotating component configured to drive the pulling rodcomponent to rotate.

In some embodiments, the pulling component may include a pillar, aslide, a screw rod, and a first driving device. The first driving devicemay be mounted on a top of the pillar. A slide rail may be mounted onthe pillar. The screw rod may be mounted in parallel with the sliderail, and one end of the screw rod may be connected to the first drivingdevice. The slide may be nested on the screw rod and fit with the screwrod by threads and at least a part of the slide may be located within aslide chute, and the rotation of the screw rod may drive the slide tomove up and down along the slide chute. The rotating component may bemounted on the slide.

In some embodiments, the apparatus may further include a weighingcomponent configured to determine a weight of a crystal on the pullingrod component. The weighing component may be mounted on the slide.

In some embodiments, the rotating component may at least include asecond driving device and a transmission component. The second drivingdevice may drive the weighing component to rotate through thetransmission component.

In some embodiments, the weighing component may include a weighingchamber and a weighing sensor. The weighing sensor may be mounted insidethe weighing chamber. One end of the weighing sensor may be fixedlyconnected to the pulling rod component. The other end of the weighingsensor may be fixedly connected to a cover plate of the weighingchamber.

In some embodiments, the transmission component may include a beltpulley and a belt. An output spin axis of the second driving device maybe connected to a spin axis of the belt pulley. At least one belt pulleymay be mounted on the belt and the weighing chamber.

In some embodiments, the pulling rod component may at least include amiddle rod and a guide rod. One end of the middle rod may be fixedlyconnected to the weighing chamber. The middle rod may pass through athird through hole mounted on the slide. The middle rod may include ahollow structure. The guide rod may pass through the middle rod. One endof the guide rod may be connected to the weighing sensor, and the otherend of the guide rod may be configured to connect a seed rod.

In some embodiments, the temperature field device may include a bottomplate, a cover plate, a drum, and a filler. The bottom plate may bemounted on a bottom of the temperature field device and cover an openend of the drum. The cover plate may be mounted on a top of thetemperature field device and cover the other open end of the drum. Thefiller may be filled in the drum.

In some embodiments, the temperature field device may include a bottomplate, a first cover plate, a second cover plate, a first drum, a seconddrum, and a filler. The bottom plate may be mounted on a bottom of thetemperature field device and cover an open end of the first barre. Thefirst cover plate may be mounted on a top of the temperature fielddevice and cover the other open end of the first drum. The second drummay be mounted inside the first drum. The filler may be filled in thesecond drum and/or a space between the second drum and the first barre.The first cover plate and the second cover plate may include throughholes. In some embodiments, the filler may include a granule shapedmaterial, a brick shaped material, and/or a felt shaped material, andthe filler may be made of a heat resistant material.

In some embodiments, the filler may include at least one of a zirconsand, a zirconia particle, an alumina particle, a zirconia felt, azirconia brick, and/or an alumina brick.

In some embodiments, the first drum may include a quartz tube, acorundum tube. The first drum may be made of a heat resistant material.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is further illustrated in terms of exemplaryembodiments. These exemplary embodiments are described in detail withreference to the drawings. These embodiments are non-limiting exemplaryembodiments, in which like reference numerals represent similarstructures, and wherein:

FIG. 1 is a schematic diagram illustrating a front view of an exemplarycrystal growth apparatus according to some embodiments of the presentdisclosure;

FIG. 2 is a schematic diagram illustrating an enlarged front view of anexemplary motion device according to some embodiments of the presentdisclosure;

FIG. 3 is a schematic diagram illustrating a right view of an exemplarycrystal growth apparatus according to some embodiments of the presentdisclosure;

FIG. 4 is a schematic diagram illustrating an enlarged right view of anexemplary motion device according to some embodiments of the presentdisclosure;

FIG. 5 is a schematic diagram illustrating an exemplary furnace bodyaccording to some embodiments of the present disclosure;

FIG. 6 is a schematic diagram illustrating a cross-sectional view of anexemplary furnace body according to some embodiments of the presentdisclosure;

FIG. 7 is a schematic diagram illustrating an exemplary furnace coveraccording to some embodiments of the present disclosure;

FIG. 8 is a schematic diagram illustrating an exemplary pullingcomponent according to some embodiments of the present disclosure;

FIG. 9 is a schematic diagram illustrating an exemplary weighingcomponent according to some embodiments of the present disclosure;

FIG. 10 is a schematic diagram illustrating an exemplary rotatingcomponent according to some embodiments of the present disclosure;

FIG. 11 is a schematic diagram illustrating an exemplary temperaturefield device according to some embodiments of the present disclosure;

FIG. 12 is a schematic diagram illustrating a top view of across-section of an exemplary temperature field device according to someembodiments of the present disclosure;

FIG. 13 is a schematic diagram illustrating a top view of an exemplaryfirst cover plate according to some embodiments of the presentdisclosure; and

FIG. 14 is a schematic diagram illustrating an exemplary observationunit according to some embodiments of the present disclosure.

DETAILED DESCRIPTION

In order to illustrate the technical solutions related to theembodiments of the present disclosure, a brief introduction of thedrawings referred to the description of the embodiments is providedbelow. Obviously, drawings described below are only some examples orembodiments of the present disclosure. Those having ordinary skills inthe art, without further creative efforts, may apply the presentdisclosure to other similar scenarios according to these drawings.Unless apparent from the locale or otherwise stated, like referencenumerals represent similar structures or operations in the drawings.

It will be understood that the terms “system,” “device,” “unit,” and/or“module” used herein are one method to distinguish different components,elements, parts, sections or assemblies of different levels. However, ifother words may achieve the same purpose, the words may be replaced byother expressions.

As used in the disclosure and the appended claims, the singular forms“a,” “an,” and “the” include plural referents unless the content clearlydictates otherwise. In general, the terms “comprise,” “comprises,”and/or “comprising,” “include,” “includes,” and/or “including,” merelyprompt to include steps and elements that have been clearly identified,and these steps and elements do not constitute an exclusive listing. Themethods or devices may also include other steps or elements.

The present disclosure relates to an apparatus for crystal growth thatcan be used to prepare single crystal materials. The single crystalmaterials can be used in various fields such as medical device imaging,safety inspection, industrial nondestructive testing, laser, etc. Thecrystal growth apparatus may be used to prepare scintillation crystals,laser crystals, or any other types of crystals which can be grownaccording to the Czochralski technique.

As shown in FIG. 1 and FIG. 3 , in some embodiments, the crystal growthapparatus may include a furnace frame 110, a furnace chamber 120, afirst bottom plate 105, and a motion device 130.

The furnace frame 110 may be configured to mount different components(e.g., the furnace chamber 120, the first bottom plate 105, the motiondevice 130) of the crystal growth apparatus 100. For example, thefurnace chamber 120 may be mounted on the furnace frame 110. Forexample, the furnace chamber 120 may be fixed on the furnace frame 110by a bolt connection, a welding connection, a hinged connection, etc. Insome embodiments, a size of the furnace frame 110 may be 1000 mm˜1400 mmin length, 750 mm˜1000 mm in width, and 1100 mm˜1800 mm in height.

The furnace chamber 120 may include components such as a furnace body120-1, a furnace cover 120-2, etc. As shown in FIG. 5 and FIG. 6 , ashape of the furnace chamber 120 may include a cylinder, which providesa space for crystal growth. In some embodiments, the shape of thefurnace chamber 120 may include a cube. The furnace cover 120-2 may bemounted above the furnace body 120-1.

In some embodiments, the size of the furnace chamber 120 may be 500mm˜900 mm in diameter and 600 mm˜1200 mm in height. In some embodiments,the furnace chamber 120 may include a cooling structure. The coolingstructure may include an air-cooling structure, a liquid-coolingstructure, and other structure that can play a cooling role. Forexample, the cooling structure may include a copper tube. Specifically,at least one circle of copper tube that is capable of passing a coolingmedium (e.g., cooling gas, cooling water, or cooling oil) through may bemounted on a sidewall of the furnace body 120-1. In some embodiments, adiameter of the copper tube may be 8 mm˜20 mm. Alternatively, thecooling structure may include other metal tubes (e.g., a stainless-steeltube).

The crystal growth apparatus 100 may further include a temperature fielddevice 200, a pulling rod component, a heater, etc. The heater may beused to heat crystalline reactants to melt the reactants. In someembodiments, the heater may include an induction coil. The crystalgrowth apparatus 100 may further include an intermediate frequency powersupply, which is used to provide power to the induction coil, causingthe induction coil to generate an alternating electromagnetic field. Arated power of the intermediate frequency power supply may be 30 KW˜60KW. As shown in FIG. 7 , the furnace cover 120-2 may include a firstthrough hole 120-4. The first through hole 120-4 may be configured toplace the temperature field device 200. In some embodiments, a height ofthe temperature field device 200 may be greater than a height of thefurnace cover 120-2, that is, a part of the temperature field device 200may be inside the furnace chamber 120 and other parts of the temperaturefield device 200 may be outside the furnace chamber 120. In someembodiments, the height of the temperature field device 200 may not begreater than the height of the furnace cover 120-2. For example, anupper-end surface of the temperature field device 200 may be flush withthe furnace cover 120-2 or lower than the furnace cover 120-2. That is,the temperature field device 200 may be mounted inside the furnacechamber 120. The temperature field device 200 may include a sealingdrum, a cover plate mounted on a top of the sealing drum, and a bottomplate mounted on a bottom of the sealing drum. The cover plate mayinclude a second through hole. The pulling rod component may passthrough the second through hole and extend into the temperature fielddevice 200. The cover plate may also include a through hole for passinga gas through. Description regarding the structure of the temperaturefield device 200 can be found elsewhere in the present disclosure (e.g.,FIGS. 11-14 and the descriptions thereof). In some embodiments, theinduction coil may be mounted inside the furnace chamber 120 and thetemperature field device 200 may be mounted inside the induction coil,that is, a multi-turn induction coil may be set around the temperaturefield device 200. Descriptions regarding a structure of the pulling rodcomponent can be found elsewhere in the present disclosure.

In some embodiments, as shown in FIG. 7 , at least one circle of squarecopper tube 120-3 capable of passing a cooling medium through may bemounted above the furnace cover 120-2. Specifically, at least one circleof copper tube 120-3 (e.g., three circles of copper tube) with a size of20 mm in width, 10 mm in height, and 2 mm in thickness may be evenly anddeeply buried and tiled in an upper-end surface of the furnace cover120-2. For example, circulating cooling water under 10° C.˜40° C. maypass through the square copper tube to play a role of heat insulationand heat dissipation. In some embodiments, a cross-sectional shape ofthe copper tube may be not limited to a square and may include othershapes such as a circle. Alternatively, the copper tube 120-3 may alsobe replaced with other metal tube (e.g., a stainless-steel tube).

In some embodiments, the furnace chamber 120 may be designed as anon-closed structure. That is, after the temperature field device 200 isplaced in the first through hole 120-4 of the furnace cover 120-2, theremay be no sealing between the furnace cover and an outer wall of thetemperature filed device 200. This design may be conducive to savingmanufacture and maintenance costs, thereby reducing production costs.

The first bottom plate 105 may be configured to support components suchas the furnace chamber 120, the temperature field, the heater, etc. Insome embodiments, the first bottom plate 105 may be a part of thefurnace body 120-1. That is, the furnace body 120-1 may includecomponents such as a sidewall, the first bottom plate 105, etc.

In some embodiments, the motion device 130 may include a pullingcomponent 140, a weighing component 150, and a rotating component 160.Description regarding the pulling component 140 and the weighingcomponent 150 may be found elsewhere in the present disclosure (e.g.,FIGS. 8-10 and the descriptions thereof). Description regarding therotating component 160 may be found elsewhere in the present disclosure(e.g., FIGS. 10-12 and the descriptions thereof).

The structures of the pulling component 140, the weighing component 150,and the rotating component 160 may be described below in connection withFIGS. 8-10 .

The pulling component 140 may be fixed on the furnace frame. The pullingcomponent 140 may be configured to control a pulling rod to move up anddown.

The pulling component 140 may include a mounting base 140-1, a pillar140-2, a first driving device, a coupling 140-6, a mounting bracket140-7, a screw rod 140-8, and a slide 140-9. The mounting base 140-1 mayinclude one or more mounting adjustment plates. By adjusting a count ofthe mounting adjustment plate(s), a height of the mounting base 140-1may be adjusted. By adjusting the mounting adjustment plate(s) to moveback and forth or left and right, a concentricity between the guide rodand the temperature field device 200 may be adjusted.

In some embodiments, a first driver 140-3, a first motor 140-4, and atransmission 140-5 may be combined into the first driving device. Thefirst driving device may be mounted on a top of the pillar 140-2. Thefirst driver 140-3 may receive a control command from a control systemand control the first motor 140-4 (e.g., controlling a rotation speed, atorque of the first motor 140-4). In some embodiments, the first motor140-4 may include a stepping hybrid servo motor. In some embodiments,the transmission 140-5 may be configured to control a rotation speed ofan output shaft of the transmission 140-5. In some embodiments, thetransmission 140-5 may include a precision planetary gear reducer. Themounting bracket 140-7 may be configured to support the first driver140-3, the first motor 140-4, and the transmission 140-5. The firstdriver 140-3 may drive the first motor 140-4 to rotate based on thecontrol command. The transmission 140-5 may convert a rotation speed ofthe first motor 140-4 from a relatively high rotation speed to arelatively low rotation speed through an internal gear structure, andoutput a reduced rotation speed through an output shaft of thetransmission 140-5.

The pillar 140-2 may include a slide rail. The screw rod 140-8 may bemounted in parallel with the slide rail. One end of the screw rod 140-8may be connected to the first driving device. Specifically, one end ofthe screw rod 140-8 may be connected to the output shaft of thetransmission 140-5 through the coupling 140-6.

The slide 140-9 may be nested on the screw rod 140-8. The slide 140-9and the screw rod 140-8 may fit by threads. At least a part of the slide140-9 may be located within a slide chute. The slide chute may be aportion of the slide rail. A rotation of the screw rod 140-8 may drivethe slide 140-9 to move up and down along the slide chute. Specifically,the first driving device may drive the rotation of the screw rod 140-8,and a rotation displacement of the screw rod 140-8 may be converted intoan up and down movement of the slide 140-9 along the screw rod 140-8. Insome embodiments, an effective travel of the screw rod 140-8 may be 300mm˜1200 mm, a screw lead of the screw rod 140-8 may be 5-20 mm, and thediameter of the screw rod 140-8 diameter may be 16 mm˜35 mm. Bycontrolling the rotation speed of the first motor 140-4, a pulling speedrequired by the crystal growth may be achieved. In some embodiments, thepulling speed may be 0.1 mm/hour˜10 mm/hour, a relatively fast pullingspeed may be 0.1 mm/hour˜3600 mm/hour, and an accuracy may be greaterthan 0.01 mm/hour.

It should be noted that, in some embodiments, a module (e.g., a KKmodule, a ball screw rod module, and other linear module) may bedirectly mounted on the pillar 140-2. The slide 140-9 may be mounted ona screw rod of the module. An output shaft of the first driving devicemay be connected to a screw rod of the module to drive an rotation ofthe screw rod. Further, a rotation displacement of the screw rod may beconverted into an up and down movement of the slide 140-9 along thescrew rod.

The weighing component 150 may be configured to determine a weight ofthe crystal on the pulling rod component. As shown in FIG. 10 , theweighing component 150 may be mounted on the slide 140-9. The weighingcomponent 150 may include a weighing chamber 150-1, a weighing sensor150-2, and the pulling rod component. The pulling rod component may atleast include a middle rod 150-3, a guide rod 150-4, and a seed rod. Theweighing sensor 150-2 may be mounted inside the weighing chamber 150-1.As shown in FIG. 9 , one end of the weighing sensor 150-2 may be fixedlyconnected to the pulling rod component. Specifically, one end of theweighing sensor 150-2 may be fixedly connected to the guide rodcomponent of the pulling rod 150-4. The other end of the weighing sensor150-2 may be fixedly connected to a cover plate of the weighing chamber150-1. For example, the weighing chamber 150-1 may include a throughhole in which a screw may be mounted to connect the weighing sensor150-2. One end of the middle rod 150-3 may be fixedly connected to theweighing chamber 150-1. For example, one end of the middle rod 150-3 maybe fixedly connected to the weighing chamber 150-1 by a bolt connection,a welding connection, a hinged connection, a buckle connection, etc. Asanother example, one end of the middle rod 150-3 may be fixedlyconnected to the weighing chamber 150-1 by other connection manners(e.g., a retractable hose).

The slide 140-9 may include a through hole 140-10. The middle rod 150-3may pass through the third through hole 140-10 on the slide 140-10.Bearing(s) may be mounted above and below the through hole 140-10 tofacilitate a rotation of the weighing chamber 150-1, thereby driving thepulling rod component to rotate. The middle rod 150-3 may include ahollow structure. The guide rod 150-4 may pass through the middle rod150-3. One end of the guide rod 150-4 may be connected to the weighingsensor 150-2. The other end of guide rod 150-4 may be connected to theseed rod. One end of the seed rod may be connected to a seed crystal forcrystal growth. In some embodiments, a baffle may be mounted on theslide 140-9. The baffle may eliminate an influence of hot air flowradiated through the first through hole 120-4 of the furnace cover 120-2of the furnace chamber 120 on the weighing sensor 150-2 of the weighingchamber 150-1, making a fluctuation of weight signals to be smaller, theweighing to be more accurate, and the device to operate more smoothly.

Through the weighing component 150, an instant weight of the crystal maybe measured, and be compared with an instant weight of a preset model.According to a control algorithm of the crystal growth automatic controlsystem, continuous signals may be output to control a magnitude of aninstant output power of the intermediate frequency power supply of theinduction coil, and accurately control a temperature in the furnace,realizing an automatic control of the crystal growth process.

The rotating component 160 may be configured to control the rotation ofthe pulling rod. The rotating component 160 may drive the weighingchamber 150-1 to rotate, thereby driving the weighing component 150 torotate and make the crystal connected to the pulling rod component 140to rotate. In some embodiments, the rotating component 160 may onlydrive the weighing component 150 to rotate. Since the guide rod 150-4 ofthe weighing component 150 is connected to the seed rod, and the otherend of the seed rod is connected to the seed crystal, the rotation ofthe weighing chamber 150-1 may drive the crystal to rotate. In someembodiments, the guide rod 150-4 may be fixedly or softly connected tothe weighing sensor 150-2. A soft connection refers to that when theweighing chamber 150-1 does not move, the guide rod 150-4 may be under aforce to move upward by a certain distance, or rotate freely left andright. The rotating component 160 may include a second driving deviceand a transmission component. The second driving device may include asecond motor 160-1 and a second driver 160-3. The transmission componentmay include a belt pulley 160-2 and a belt 160-5. At least one belt160-5 may be mounted on the belt pulley 160-2 and the weighing chamber150-1. In some embodiments, the transmission component may include agear chain transmission component including a gear and a chain. Anoutput shaft of the second driving device may be connected to the gear.A gear structure may be mounted on an outer wall of the weighing chamber150-1. The chain may be nested on the gear and the weighing chamber150-1.

The rotating component 160 may also include a support component 160-4.The rotating component 160 may be mounted on the slide 140-9 through thesupport component 160-4. The support component 160-4 may be fixedlyconnected to the slide 140-9, for example, by a welding connection, aconnection by one or more screws, a connection by one or more bolts, aconnection by one or more pin joints.

An output spin axis of the second driving device may be connected to aspin axis of the belt pulley 160-2. The second driving device may drivethe weighing component 150 to rotate through the transmission component.Specifically, an output spin axis of the second motor 160-1 may beconnected to the spin axis of the belt pulley 160-2. The second drivingdevice may drive the weighing component 150 to rotate through thetransmission component. By controlling a rotation speed of the secondmotor 160-1, the rotation speed required by the crystal growth may beachieved. In some embodiments, the rotation speed may be 0.1-120 rpm andthe precision may be 0.1 rpm.

FIG. 11 is a schematic diagram illustrating an exemplary temperaturefield device according to some embodiments of the present disclosure.

It should be noted that FIG. 11 is provided for illustration purposesand does not limit the specific shape and structure of the temperaturefield device. The temperature field device 200 may be placed in acrystal growth furnace to provide a temperature gradient required bycrystal growth and ensure the stability of a crystallization process ofthe crystal. The temperature field device 200 may be cylindrical or haveother pillar shapes, such as a polygonal prism. The external structureof the temperature field device 200 may generally consist of a firsthollow pillar and two cover plates which cover two ends of the firsthollow pillar. Specifically, the two cover plates may be connected tothe two ends of the first hollow pillar in a connection manner such as abonding connection, a welding connection, a riveting connection, a keyconnection, a bolt connection, a buckle connection, etc. Alternatively,one end of the first hollow pillar may be connected to one cover plate(e.g., by a detachable connection), and the other end of the firsthollow pillar may be integrally formed with or non-detachably connectedto another cover plate. A second hollow pillar with a height less thanthat of the first hollow pillar may be mounted inside the hollow pillar.A space between the first hollow pillar and the second hollow pillar,and/or a space inside the second hollow pillar may be filled with asubstance for heat preservation. For example, the space between thefirst hollow pillar and the second hollow pillar may be filled with asubstance for heat preservation, and the space inside the second hollowpillar may also be filled with a substance for heat preservation. Asanother example, the space between the first hollow pillar and thesecond hollow pillar may be filled with a substance for heatpreservation, while the space inside the second hollow pillar may not befilled with a substance for heat preservation. As still another example,the space between the first hollow pillar and the second hollow pillarmay not be filled with a substance for heat preservation, and the spaceinside the second hollow pillar may be filled with a substance for heatpreservation. Meanwhile, the substance filled in the second hollowpillar may also support a crucible for placing reactants. Besides, anend of the second hollow pillar near a top of the first hollow pillarmay be connected to an insulation board to further enhance theinsulation effect. As shown in FIG. 11 , the temperature field device200 may include a bottom plate 202, a first drum 204, a second drum 206,a filler 208, a first cover plate 210, a second cover plate 212, anobservation unit 218, a sealing ring 220, a pressure ring 222, and a gaschannel 224. When the temperature filed component 200 is in use, thetemperature field device 200 may be placed in the crystal growthfurnace. Specifically, the temperature field device 20 may be placed inthe induction coil 216 in the furnace, and a crucible 214 may be placedinside the temperature field device 200.

The bottom plate 202 may be mounted on a bottom of the temperature fielddevice 200 to support other components (e.g., the first barrel 204, thesecond barrel 206, and/or filling body 208) of the temperature fielddevice 200. In some embodiments, a material of the bottom plate 102 mayinclude a heat-reflective material with a relatively high reflectioncoefficient, such as gold, silver, nickel, aluminum foil, copper,molybdenum, coated metal, stainless steel, etc. Preferably, the materialof the bottom plate 202 may be copper. In some embodiments, a diameterof the bottom plate 202 may be 200 mm˜500 mm. Preferably, the diameterof the bottom plate 202 may be 250 mm˜450 mm. More preferably, thediameter of the bottom plate 202 may be 300 mm˜400 mm. More preferably,the diameter of the bottom plate 202 may be 310 mm˜390 mm. Morepreferably, the diameter of the bottom plate 202 may be 320 mm˜380 mm.More preferably, the diameter of the bottom plate 202 may be 430 mm˜370mm. More preferably, the diameter of the bottom plate 202 may be 440mm˜360 mm. In some embodiments, a thickness of bottom plate 202 may be10 mm˜40 mm. Preferably, the thickness of the bottom plate 202 may be 15mm˜35 mm. More preferably, the thickness of the bottom plate 202 may be20 mm˜30 mm. More preferably, the thickness of the bottom plate 202 maybe 21 mm˜29 mm. More preferably, the thickness of the bottom plate 202may be 22 mm˜28 mm. More preferably, the thickness of the bottom plate202 may be 23 mm˜27 mm. More preferably, the thickness of the bottomplate 202 may be 24 mm˜26 mm. Since the temperature field device 200 maybe placed in a furnace body of a single crystal growth furnace when thetemperature filed component 200 is in use, the bottom plate 202 may beplaced or mounted on a mounting plate of the furnace body. A mode ofplacing or mounting the bottom plate 202 may include a weldingconnection, a riveting connection, a bolt connection, a bondingconnection, etc. During the bottom plate 202 is being mounted, a levelrequirement of the bottom plate 202 may be less than 0.5 mm/m. mm/m mayrefer to a height difference (mm) between two ends of a unit length (m).Preferably, the level requirement of the bottom plate 202 may be lessthan 0.4 mm/m. More preferably, the level requirement of the bottomplate 202 may be less than 0.3 mm/m. More preferably, the levelrequirement of the bottom plate 202 may be less than 0.2 mm/m. Morepreferably, the level requirement of the bottom plate 202 may be lessthan 0.1 mm/m. More preferably, the level requirement of the bottomplate 202 may be less than 0.09 mm/m. More preferably, the levelrequirement of the bottom plate 202 may be less than 0.08 mm/m. Morepreferably, the level requirement of the bottom plate 202 may be lessthan 0.07 mm/m. More preferably, the level requirement of the bottomplate 202 may be less than 0.06 mm/m. More preferably, the levelrequirement of the bottom plate 202 may be less than 0.05 mm/m. Morepreferably, the level requirement of the bottom plate 202 may be lessthan 0.04 mm/m. More preferably, the level requirement of the bottomplate 202 may be less than 0.03 mm/m. More preferably, the levelrequirement of the bottom plate 202 may be less than 0.02 mm/m. Morepreferably, the level requirement of the bottom plate 202 may be lessthan 0.01 mm/m. When the temperature field device 200 is in use, aninternal temperature may reach a relatively high temperature, forexample, 1900° C. Therefore, it is necessary to reduce heat radiation ofthe temperature field device 200 to prevent the furnace body from beingdamaged by receiving excessive heat. In this case, the bottom plate 202may be provided with circulating cooling medium channel(s), throughwhich a circulating cooling medium may pass to absorb the heat insidethe temperature field device 200, thereby insulating the heat andreducing the heat radiation. The circulating cooling medium channel(s)may be mounted inside the bottom plate 202 with a spiral shape or asnake shape. A cooling manner may include liquid cooling, wind cooling,gas cooling, or other manner that can achieve cooling purpose. When theliquid cooling is used, a cooling medium may include water, ethanol,ethylene glycol, isopropanol, n-hexane, or the like, or any combinationthereof. For example, the cooling medium may include a 50:50 mixedliquid of water and ethanol. The cooling medium used may also includecooling oil. A count of the circulating cooling medium channel(s) may beone or more, for example, 1 to 3. In some embodiments, diameter(s) ofthe circulating cooling medium channel(s) may be 5 mm˜25 mm. Preferably,the diameter (s) of the circulating cooling medium channel(s) may be 10mm˜20 mm. Preferably, the diameter(s) of the circulating cooling mediumchannel(s) may be 11 mm˜19 mm. Preferably, the diameter(s) of thecirculating cooling medium channel(s) may be 12 mm˜18 mm. Preferably,the diameter(s) of the circulating cooling medium channel(s) may be 13mm˜17 mm. Preferably, the diameter(s) of the circulating cooling mediumchannel(s) may be 14 mm˜15 mm.

The first drum 204 may be mounted on the bottom plate 202 and constitutean outer wall of the temperature field device 200. The bottom plate 202may cover an open end of the first drum 204. The first drum 204 may bemounted on the bottom plate 202 to support the temperature field device200. The first drum 204 may be mounted on the bottom plate 202 by awelding connection, a riveting connection, a bolt connection, a bondingconnection, etc. Meanwhile, the first drum 204 may be used to achievethe sealing and the heat preservation of the temperature field device200 together with other components (e.g., the bottom plate 202, thefirst cover plate 212, etc.) of the temperature field device 200. Whenthe first drum 204 is being mounted, a concentricity of the first drum204 and the bottom plate 202 may be less than 1 mm. More preferably, theconcentricity of the first drum 104 and the bottom plate 102 may be lessthan 0.9 mm. More preferably, the concentricity of the first drum 104and the bottom plate 102 may be less than 0.8 mm. More preferably, theconcentricity of the first drum 104 and the bottom plate 102 may be lessthan 0.7 mm. More preferably, the concentricity of the first drum 104and the bottom plate 102 may be less than 0.6 mm. More preferably, theconcentricity of the first drum 104 and the bottom plate 102 may be lessthan 0.5 mm. More preferably, the concentricity of the first drum 204and the bottom plate 202 may be less than 0.4 mm. More preferably, theconcentricity of the first drum 204 and the bottom plate 202 may be lessthan 0.3 mm. More preferably, the concentricity of the first drum 204and the bottom plate 202 may be less than 0.2 mm. More preferably, theconcentricity of the first drum 204 and the bottom plate 202 may be lessthan 0.1 mm. A perpendicularity between the first drum 204 and thebottom plate 202 may be less than 0.2 degrees. More preferably, theperpendicularity of the first drum 204 and the bottom plate 202 may beless than 0.15 degrees. More preferably, the perpendicularity of thefirst drum 204 and the bottom plate 202 may be less than 0.1 degrees.More preferably, the perpendicularity of the first drum 204 and thebottom plate 202 may be less than 0.05 degrees. More preferably, theperpendicularity of the first drum 204 and the bottom plate 202 may beless than 0.03 degrees. In some embodiments, the first drum 204 may bemade of quartz (silicon oxide), corundum (alumina), zirconium oxide,graphite, carbon fiber, ceramics, etc., or other heat resistantmaterials such as boride, carbide, nitride, silicide, phosphide,sulfide, etc. of rare-earth metals. Preferably, the first drum 204 maybe a quartz tube or a corundum tube. According to a size of the bottomplate 202, an inner diameter of the first drum 204 may be 180 mm˜450 mm.Preferably, the inner diameter of the first drum 204 may be 200 mm˜530mm. More preferably, the inner diameter of the first drum 204 may be 220mm˜510 mm. More preferably, the inner diameter of the first drum 204 maybe 250 mm˜380 mm. More preferably, the inner diameter of the first drum204 may be 270 mm˜360 mm. More preferably, the inner diameter of thefirst drum 204 may be 300 mm˜330 mm. More preferably, the inner diameterof the first drum 204 may be 310 mm˜320 mm. In some embodiments, athickness of the first drum 204 be 1 mm˜15 mm. Preferably, the thicknessof the first drum 204 be 3 mm˜12 mm. More preferably, the thickness ofthe first drum 204 be 5 mm˜10 mm. More preferably, the thickness of thefirst drum 204 be 6 mm˜9 mm. More preferably, the thickness of the firstdrum 204 be 7 mm˜8 mm. A height of the first drum 204 may be 600 mm˜1600mm. Preferably, the height of the first drum 204 may be 700 mm˜1500 mm.More preferably, the height of the first drum 204 may be 800 mm˜1400 mm.More preferably, the height of the first drum 204 may be 900 mm˜1300 mm.More preferably, the height of the first drum 204 may be 1000 mm˜1200mm. More preferably, the height of the first drum 204 may be 1050mm˜1150 mm. More preferably, the height of the first drum 204 may be1060 mm˜1140 mm. More preferably, the height of the first drum 204 maybe 1070 mm˜1130 mm. More preferably, the height of the first drum 204may be 1080 mm˜1120 mm. More preferably, the height of the first drum204 may be 1090 mm˜1110 mm. More preferably, the height of the firstdrum 204 may be 1095 mm˜105 mm. The second drum 206 may be mountedinside the first drum 204. In some embodiments, the second drum 206 maybe made of a material with relatively good heat resistance to maintaintemperature stable during crystal growth stable. The second drum 206 maybe made of silicon oxide, zirconium oxide, aluminum oxide, graphite,ceramics, etc. Preferably, the second drum 206 may be a zirconium tubemade of zirconia. To match the size of the first drum 204, an innerdiameter of the second drum 206 may be 70 mm˜300 mm. Preferably, theinner diameter of the second drum 206 may be 100 mm˜270 mm. Morepreferably, the inner diameter of the second drum 206 may be 120 mm˜250mm. More preferably, the inner diameter of the second drum 206 may be150 mm˜220 mm. More preferably, the inner diameter of the second drum206 may be 170 mm˜200 mm. More preferably, the inner diameter of thesecond drum 206 may be 180 mm˜270 mm. A thickness of the second drum 206may be 8 mm˜30 mm. Preferably, the thickness of the second drum 206 maybe 10 mm˜30 mm. More preferably, the thickness of the second drum 206may be 15 mm˜25 mm. More preferably, the thickness of the second drum206 may be 16 mm˜24 mm. More preferably, the thickness of the seconddrum 206 may be 17 mm˜23 mm. More preferably, the thickness of thesecond drum 206 may be 18 mm˜22 mm. More preferably, the thickness ofthe second drum 206 may be 19 mm˜21 mm. In some embodiments, one end ofthe second drum 206 may be placed or mounted on the bottom plate 202,for example, by a bonding connection, a welding connection, a rivetingconnection, a key connection, a bolt connection, a buckle connection,etc. When the second drum 206 is being mounted, a concentricity of thesecond drum 206 and the bottom plate 102 may be less than 1 mm. Morepreferably, the concentricity of the second drum 106 and the bottomplate 102 may be less than 0.9 mm. More preferably, the concentricity ofthe second drum 206 and the bottom plate 102 may be less than 0.8 mm.More preferably, the concentricity of the second drum 206 and the bottomplate 102 may be less than 0.7 mm. More preferably, the concentricity ofthe second drum 206 and the bottom plate 102 may be less than 0.6 mm.More preferably, the concentricity of the second drum 206 and the bottomplate 202 may be less than 0.5 mm. More preferably, the concentricity ofthe second drum 206 and the bottom plate 202 may be less than 0.4 mm.More preferably, the concentricity of the second drum 206 and the bottomplate 202 may be less than 0.3 mm. More preferably, the concentricity ofthe second drum 206 and the bottom plate 202 may be less than 0.2 mm.More preferably, the concentricity of the second drum 206 and the bottomplate 202 may be less than 0.1 mm. More preferably, the concentricity ofthe second drum 206 and the bottom plate 202 may be less than 0.05 mm.Meanwhile, a perpendicularity of the second drum 206 may be less than0.2 degrees. More preferably, the perpendicularity of the second drum206 may be less than 0.15 degrees. More preferably, the perpendicularityof the second drum 206 may be less than 0.1 degrees. More preferably,the perpendicularity of the second drum 206 may be less than 0.08degrees. More preferably, the perpendicularity of the second drum 206may be less than 0.05 degrees. In some embodiments, when the second drum206 is mounted on the bottom plate 202, according to different lengths,the second drum 206 may be in different mounting states. When a lengthof the second drum 206 is the same as that of the first drum 204, amounting state of the second drum 206 may be similar to that of thefirst drum 204, that is, one open end of the second drum 206 may beconnected to the bottom plate 202 and the other open end of the seconddrum 206 may be connected to the first cover plate 210. When the lengthof the second drum 206 is smaller than the first drum 204, the otheropen end of the second drum 206 may be connected to other components(e.g., the second cover plate 212) of the temperature field device 200.The second cover plate 212 may cover the other open end of the seconddrum 206. Meanwhile, a size and/or a shape of the second cover plate 212(e.g., a diameter of a circle cover plate) may be matched with across-section of the first drum 204 to achieve a seamless connectionwith the first drum 204. In some embodiments, the second drum 206 maynot be mounted on the bottom plate 202. When the length of the seconddrum 206 is smaller than that of the first drum 204, one end of thesecond drum 206 may be mounted on other components (e.g., the firstcover plate 210 and the second cover plate 212) of the temperature fielddevice 200, and the other end of the second drum 206 may be kept at acertain distance from the bottom plate 202 (e.g., in a floating state).In some embodiments, the length of the second drum 206 may be consistentwith that of the first drum 204. In some embodiments, the length of thesecond drum 206 may be 500 mm˜1500 mm. More preferably, the length ofthe second drum 206 may be 600 mm˜1400 mm. More preferably, the lengthof the second drum 206 may be 700 mm˜1300 mm. More preferably, thelength of the second drum 206 may be 800 mm˜1200 mm. More preferably,the length of the second drum 206 may be 900 mm˜1100 mm. Morepreferably, the length of the second drum 206 may be 950 mm˜1050 mm.More preferably, the length of the second drum 206 may be 960 mm˜1040mm. More preferably, the length of the second drum 206 may be 970mm˜1030 mm. More preferably, the length of the second drum 206 may be980 mm˜1020 mm. More preferably, the length of the second drum 206 maybe 990 mm˜1010 mm.

The filler 208 may be filled in the second drum 206, and/or a spacebetween the first drum 204 and the second drum 206. The filler 208 maybe configured for heat preservation. In some embodiments, a thickness, aheight, and/or a tightness of the filler 208 may change a position of acomponent (e.g., the crucible 214) supported by the filler 208, a spacevolume of the heat dissipation in the temperature field device 200,and/or a temperature gradient required by the crystal growth. Bychanging the thickness, the height and/or the tightness of the filler208, different stable temperature gradients may be obtained to meetdifferent crystal growth requirements. Meanwhile, when the second drum206 cracks, the filler 208 filled in the space between the first drum204 and the second drum 206 may act as a thermal insulation layer toprevent a change caused by a communication between the temperature fielddevice 200 and the external environment, which may affect the crystalgrowth. The thermal insulation layer formed by the filler 208 maymaintain the temperature gradient in the temperature field device 200 inthe above-mentioned case to avoid the sudden change of the temperaturefield device. In some embodiments, the filler 208 may also buffer thesudden temperature change when the second drum 206 cracks. In someembodiments, the filler 208 may be made of a heat resistant material,such as silicon oxide, aluminum oxide, zirconium oxide, graphite, carbonfiber, ceramics, and boride, carbide, nitride, silicide, phosphide,sulfide, etc. of rare-earth metals, etc. In some embodiments, the filler208 may include a zircon sand (a zirconium silicate compound), azirconia particle, an alumina particle, a zirconia felt, a zirconiabrick, an alumina brick, or other heat resistant materials. A particlesize of the filler 208 may be 5 mesh˜200 mesh. More preferably, theparticle size of the filler 208 may be 10 mesh˜190 mesh. Morepreferably, the particle size of the filler 208 may be 20 mesh˜180 mesh.More preferably, the particle size of the filler 208 may be 30 mesh˜170mesh. More preferably, the particle size of the filler 208 may be 40mesh˜160 mesh. More preferably, the particle size of the filler 208 maybe 50 mesh˜150 mesh. More preferably, the particle size of the filler208 may be 60 mesh˜140 mesh. More preferably, the particle size of thefiller 208 may be 70 mesh˜130 mesh. More preferably, the particle sizeof the filler 208 may be 80 mesh˜120 mesh. More preferably, the particlesize of the filler 208 may be 90 mesh˜110 mesh. More preferably, theparticle size of the filler 208 may be 95 mesh˜105 mesh. In someembodiments, the filler 208 may include a substance with a shape of felt(e.g. a zirconia felt). In some embodiments, the filler 208 may includea substance with a shape of brick (e.g., a zirconia brick, and/or analumina brick). In some embodiments, the filler 208 may include amixture of any two or more of a substance with a shape of granule, ashape of brick, or a shape of felt. For example, the filler 208 mayinclude a mixture of a zirconia felt with one or more of a zirconiasand, a zirconia particle, an alumina particle, a zirconia brick, analumina brick, or other heat resistance granular materials.

In some embodiments, the filler 208 filled in the second drum 206 may beconfigured to support the crucible 214 containing the reactants forcrystal growth. The filler 208 may cover a portion of the crucible 214,for example, a bottom and a sidewall of the filler 208. To prevent thefiller 208 from falling into the reactants in the crucible 214, an upperedge of the crucible 214 may be higher than the filling height of thefiller 208 filled in the second drum 206. On the other hand, the seconddrum 206 may also prevent the filler 208 filled in the space between thefirst drum 204 and the second drum 206 from falling into the crucible214. In some embodiments, the crucible 214 may be made of iridium (Ir),molybdenum (Mo), tungsten (W), rhenium (Re), graphite (C),tungsten-molybdenum alloy, or the like, or any combination thereof.Preferably, the crucible 214 may be an iridium crucible. In someembodiments, a diameter of the crucible 214 may be 60 mm˜250 mm. Morepreferably, the diameter of the crucible 214 may be 80 mm˜220 mm. Morepreferably, the diameter of the crucible 214 may be 100 mm˜200 mm. Morepreferably, the diameter of the crucible 214 may be 110 mm˜190 mm. Morepreferably, the diameter of the crucible 214 may be 120 mm˜180 mm. Morepreferably, the diameter of the crucible 214 may be 130 mm˜170 mm. Morepreferably, the diameter of the crucible 214 may be 140 mm˜160 mm. Morepreferably, the diameter of the crucible 214 may be 145 mm˜155 mm. Thethickness of the crucible 214 may be 2 mm˜4 mm. More preferably, thethickness of the crucible 214 may be 2.2 mm˜3.8 mm. More preferably, thethickness of the crucible 214 may be 2.5 mm˜3.5 mm. More preferably, thethickness of the crucible 214 may be 2.6 mm˜3.4 mm. More preferably, thethickness of the crucible 214 may be 2.7 mm˜3.3 mm. More preferably, thethickness of the crucible 214 may be 2.8 mm˜3.2 mm. More preferably, thethickness of the crucible 214 may be 2.9 mm˜0.1 mm. The height of thecrucible 214 may be 60 mm˜250 mm. More preferably, the height of thecrucible 214 may be 80 mm˜220 mm. More preferably, the height of thecrucible 214 may be 100 mm˜200 mm. More preferably, the height of thecrucible 214 may be 110 mm˜190 mm. More preferably, the height of thecrucible 214 may be 120 mm˜180 mm. More preferably, the height of thecrucible 214 may be 130 mm˜170 mm. More preferably, the height of thecrucible 214 may be 140 mm˜160 mm. More preferably, the height of thecrucible 214 may be 145 mm˜155 mm.

FIG. 12 is a schematic diagram illustrating a top view of across-section of an exemplary temperature field device according to someembodiments of the present disclosure.

As shown in FIG. 12 , a periphery of the temperature field device 200may be the first drum 204. The space between the second drum 206 and thefirst drum 204 may be filled with the filler 208. The crucible 214 maybe placed in the second drum 206, and supported by the filler 208 whichis filled at a bottom of the second drum 206. It can be seen that, fromoutside to inside, components of the temperature field device 200 maysuccessively include the first drum 204, the filler 208, the second drum206, and the crucible 214. Meanwhile, the above-mentioned fourcomponents may form a concentric circle and a concentricity may be lessthan 1 mm. More preferably, the concentricity may be less than 0.9 mm.More preferably, the concentricity may be less than 0.8 mm. Morepreferably, the concentricity may be less than 0.7 mm. More preferably,the concentricity may be less than 0.6 mm. More preferably, theconcentricity may be less than 0.5 mm. More preferably, theconcentricity may be less than 0.4 mm. More preferably, theconcentricity may be less than 0.3 mm. More preferably, theconcentricity may be less than 0.2 mm. More preferably, theconcentricity may be less than 0.1 mm. The formed concentric circle maybe beneficial for growing crystals, observing the crystal growth,introducing flowing gas, and pulling up the crystals.

In some embodiments, the crucible 214 may be used as a heater to meltthe reactants contained therein to facilitate subsequent crystal growth.An induction coil (e.g., the induction coil 216 illustrated in FIG. 11 )surrounding the outer wall of the first drum 204 may generate analternating magnetic field when an alternating current with a certainfrequency is passed. A closed induced current (i.e., an eddy current)may be generated in a conductor (e.g., the crucible 214) caused by theelectromagnetic induction of the alternating magnetic field. The inducedcurrent may be unevenly distributed on a cross-section of the conductorand the electrical energy of a high-density current on a surface of theconductor may be converted into heat energy to increase the temperatureof the conductor to melt the reactants. The induction coil 216 mayinclude a coil with 7 turns˜12 turns. More preferably, the inductioncoil 216 may include a coil with 8 turns˜11 turns. More preferably, theinduction coil 216 may include a coil with 9 turns˜10 turns. Aninduction frequency may be 2 kHz˜15 kHz. More preferably, the inductionfrequency may be 3 kHz˜14 kHz. More preferably, the induction frequencymay be 4 kHz˜13 kHz. More preferably, the induction frequency may be 5kHz˜12 kHz. More preferably, the induction frequency may be 6 kHz˜11kHz. More preferably, the induction frequency may be 7 kHz˜10 kHz. Morepreferably, the induction frequency may be 8 kHz˜9 kHz. In someembodiments, the filling height of the filler 208 may result in that avertical distance between an upper edge of the crucible 214 and an upperedge of the induction coil 216 is 0 mm˜∓50 mm (i.e., −50 mm˜50 mm),wherein, “−” represents that the upper edge of the crucible 214 is lowerthan the upper edge of the induction coil 216, and “+” represents thatthe upper edge of the crucible 214 is higher than the upper edge of theinduction coil 216. More preferably, the vertical distance between theupper edge of the crucible 214 and the upper edge of the induction coil216 may be −5 mm˜+45 mm. More preferably, the vertical distance betweenthe upper edge of the crucible 214 and the upper edge of the inductioncoil 216 may be −40 mm˜+40 mm. More preferably, the vertical distancebetween the upper edge of the crucible 214 and the upper edge of theinduction coil 216 may be −35 mm˜+35 mm. More preferably, the verticaldistance between the upper edge of the crucible 214 and the upper edgeof the induction coil 216 may be −30 mm˜+30 mm. More preferably, thevertical distance between the upper edge of the crucible 214 and theupper edge of the induction coil 216 may be −25 mm˜+25 mm. Thetemperature gradient of the temperature field device 200 can be adjustedby changing a relative position between the crucible 214 and theinduction coil 216. For example, when the crucible 214 is totally withinthe coil range of the induction coil 216, the heat generated by thecrucible 214 may be relatively large; whereas, when only a portion ofthe crucible 214 is in the coil range of the induction coil 216, theheat generated by the crucible 214 may be relatively small, accordingly,the heat position and/or a space size of heat dissipation in thetemperature field device 200 may be determined, and the temperaturegradient may be further affected.

The first cover plate 210 may be mounted on a top of the temperaturefield device 200, and may be used to seal the temperature field device200 together with other components (e.g., the first drum 204). The firstcover plate 210 may cover the other open end of the first drum 204. Thefirst cover plate 210 may be connected to the first drum 204 by awelding connection, a riveting connection, a bolt connection, a bondingconnection, or the like. For example, a silicone sealing ring may beused at a joint between the first cover plate 210 and the first drum204, and a screw may be used to screw and seal the first cover plate 210and the first drum 204. In some embodiments, a material of the firstcover plate 210 may be similar to that of the bottom plate 202. Thefirst cover plate 210 may be made of a heat-reflective material with arelatively high reflection coefficient, such as gold, silver, nickel,aluminum foil, copper, molybdenum, coated metal, stainless steel, etc.Preferably, the first cover plate 210 may be a copper plate. When thefirst cover plate 210 is being mounted, a concentricity of the firstcover plate 210 and the first drum 204 may be less than 0.5 mm. Morepreferably, the concentricity of the first cover plate 210 and the firstdrum 204 may be less than 0.4 mm. More preferably, the concentricity ofthe first cover plate 210 and the first drum 204 may be less than 0.3mm. More preferably, the concentricity of the first cover plate 210 andthe first drum 204 may be less than 0.2 mm. More preferably, theconcentricity of the first cover plate 210 and the first drum 204 may beless than 0.1 mm. In some embodiments, a diameter of the first coverplate 210 may be 200 mm˜500 mm. More preferably, the diameter of thefirst cover plate 210 may be 250 mm˜450 mm. More preferably, thediameter of the first cover plate 210 may be 300 mm˜400 mm. Morepreferably, the diameter of the first cover plate 210 may be 310 mm˜390mm. More preferably, the diameter of the first cover plate 210 may be320 mm˜380 mm. More preferably, the diameter of the first cover plate210 may be 330 mm˜370 mm. More preferably, the diameter of the firstcover plate 210 may be 340 mm˜360 mm. In some embodiments, a thicknessof the first cover plate 210 may be 10 mm˜40 mm. More preferably, thethickness of the first cover plate 210 may be 15 mm˜˜35 mm. Morepreferably, the thickness of the first cover plate 210 may be 20 mm˜30mm. More preferably, the thickness of the first cover plate 210 may be21 mm˜29 mm. More preferably, the thickness of the first cover plate 210may be 22 mm˜28 mm. More preferably, the thickness of the first coverplate 210 may be 23 mm˜27 mm. More preferably, the thickness of thefirst cover plate 210 may be 24 mm˜26 mm. In some embodiments, the firstcover plate 210 may include at least one fourth through hole. The atleast one fourth through hole may be configured to pass a gas through.For example, the at least one fourth through hole may constitute achannel for the gas to enter into and/or exit from the temperature fielddevice 200. The gas may be introduced into the temperature field device200 through at least one fourth through hole and be discharged from thetemperature field device 200 through remaining fourth through hole(s) orthe fourth through hole(s) through which the gas is introduced. In someembodiments, the gas may include one or more of oxygen and/or inertgas(es). The inert gas(es) may include nitrogen, helium, neon, argon,krypton, xenon, radon, etc. In some embodiments, the gas may include acombination of oxygen with one or more inert gases. In some embodiments,the gas may include a mixed gas of hydrogen and/or carbon monoxide withone or more inert gases. In some embodiments, the gas may include one ormore of nitrogen, argon, oxygen, or carbon monoxide. According to thecharacteristics and size of the crystal to be grown, a flow rate of thegas introduced into the temperature field device 200 may be 0.01L/min˜50 L/min. More preferably, the flow rate of the introduced gas maybe 0.01 L/min˜50 L/min. More preferably, the flow rate of the introducedgas may be 0.1 L/min˜50 L/min. More preferably, the flow rate of theintroduced gas may be 1 L/min˜50 L/min. More preferably, the flow rateof the introduced gas may be 5 L/min˜45/min. More preferably, the flowrate of the introduced gas may be 10 L/min˜40 L/min. More preferably,the flow rate of the introduced gas may be 15 L/min˜35 L/min.Preferably, the flow rate of the introduced gas may be 20 L/min˜30L/min. More preferably, the flow rate of the introduced gas may be 21L/min˜29 L/min. More preferably, the flow rate of the introduced gas maybe 22 L/min˜28 L/min. More preferably, the flow rate of the introducedgas may be 23 L/min˜27 L/min. More preferably, the flow rate of theintroduced gas may be 24 L/min˜26 L/min.

In some embodiments, other components may be mounted on the first coverplate 210.

FIG. 13 is a schematic diagram illustrating a top view of an exemplaryfirst cover plate according to some embodiments of the presentdisclosure.

As shown in FIG. 13 , the first cover plate 210 may include two fourththrough holes 310-1 and 310-2 through which a gas may enter into and/orexit from the temperature field device 200. In some embodiments,diameters of the fourth through holes 310-1 and 310-2 may be 15 mm˜30mm. More preferably, the diameters of the fourth through holes 310-1 and310-2 may be 18 mm˜27 mm. More preferably, the diameters of the fourththrough holes 310-1 and 310-2 may be 20 mm˜25 mm. More preferably, thediameters of the fourth through holes 310-1 and 310-2 may be 21 mm˜24mm. More preferably, the diameters of the fourth through holes 310-1 and310-2 may be 22 mm˜23 mm. In some embodiments, rotation central axes ofthe fourth through holes 310-1 and 310-2 may be perpendicular to thehorizontal plane. In some embodiments, the rotation central axes of thefourth through holes 310-1 and 310-2 may form angles of 3 degrees˜20degrees with a vertical line of the horizontal plane. More preferably,the rotation central axes of the fourth through holes 310-1 and 310-2may form angles of 5 degrees˜18 degrees with the vertical line of thehorizontal plane. More preferably, the rotation central axes of thefourth through holes 310-1 and 310-2 may form angles of 7 degrees˜15degrees with the vertical line of the horizontal plane. More preferably,the rotation central axes of the fourth through holes 310-1 and 310-2may form angles of 9 degrees˜13 degrees with the vertical line of thehorizontal plane. More preferably, the rotation central axes of thefirst through hole 310-1 and 310-2 may form angles of 11-12 degrees withthe vertical line of the horizontal plane. A distance between centers ofthe two through holes may be 70 mm˜150 mm. More preferably, the distancebetween the centers of two through holes may be 80 mm˜140 mm. Morepreferably, the distance between the centers of two through holes may be90 mm˜130 mm. More preferably, the distance between the centers of twothrough holes may be 100 mm˜120 mm. More preferably, the distancebetween the centers of two through holes may be 105 mm˜115 mm. Morepreferably, the distance between the centers of two through holes may be10 mm˜113 mm. More preferably, the distance between the centers of twothrough holes may be 109 mm˜111 mm.

In some embodiments, an observation unit 218 may be mounted above thefourth through holes 310-1 and 310-2. Since the crystal growth period isrelatively long (which may reach 5-40 days), a unit through which theinternal situation of the temperature field device 200 can be observedmay be mounted on the temperature field device 200. A user (e.g., aworker in a factory) can observe the growth of the crystal through theobservation unit 218. If an abnormal situation is found, timely remedialaction can be executed.

FIG. 14 is a schematic diagram illustrating an exemplary observationunit according to some embodiments of the present disclosure.

The observation unit 218 may be a tubular device with a closed end andan open end. The observation unit 218 may include a first part 410. Asize of the first part 410 may be matched with that of the fourththrough hole 310-1/310-2 of the first cover plate 210, thereby realizinga connection between the observation unit 218 and the first cover plate210, for example, by a riveting connection, a screw connection, etc.Meanwhile, a lower end of the first part 410 may be open, accordingly,after the observation unit 218 is connected with the first cover plate210, a connection between an inner chamber of the observation unit 218and the fourth through hole 310-1/310-2 can be achieved. According tothe diameter of the fourth through hole 310-1/310-2, a diameter of thefirst part may be 15 mm˜30 mm. More preferably, the diameter of thefirst part 410 may be 18 mm˜27 mm. More preferably, the diameter of thefirst part 410 may be 20 mm˜25 mm. More preferably, the diameter of thefirst part 410 may be 21 mm˜24 mm. More preferably, the diameter of thefirst part 410 may be 22 mm˜23 mm. The observation unit 218 may furtherinclude a seventh through hole 420. The seventh through hole 420 may beopened at any position of a second part 430 of the observation unit 218and may be connected with the inner chamber of the observation unit 218.After the observation unit 218 is connected to the fourth through hole310-1/310-2, the seventh through hole 420 may be configured to realizethe function of gas passing. In some embodiments, a diameter of theseventh through hole 420 may be 3 mm˜10 mm. More preferably, thediameter of the seventh through hole 420 may be 4 mm˜9 mm. Morepreferably, the diameter of the seventh through hole 420 may be 5-8 mm.More preferably, the diameter of the seventh through hole 420 may be 6mm˜7 mm. The second part 430 may be a part that is protruded outside thefirst cover plate 210 after the observation unit 218 is connected to thefourth through hole 310-1/310-2, and a height of the second part 430 maybe 50 mm˜100 mm. More preferably, the height of the second part 430 maybe 60 mm˜90 mm. Preferably, the height of the second part 430 may be 70mm˜80 mm. More preferably, the height of the second part 430 may be 71mm˜79 mm. More preferably, the height of the second part 430 may be 72mm˜78 mm. More preferably, the height of the second part 430 may be 73mm˜77 mm. More preferably, the height of the second part 430 may be 74mm˜76 mm. In some embodiments, the diameter of the second part 430 maybe 26 mm˜66 mm. More preferably, the diameter of the second part 430 maybe 30 mm˜60 mm. More preferably, the diameter of the second part 430 maybe 35 mm˜55 mm. More preferably, the diameter of the second part 430 maybe 40 mm˜50 mm. More preferably, the diameter of the second part 430 maybe 41 mm˜49 mm. More preferably, the diameter of the second part 430 maybe 42 mm˜48 mm. More preferably, the diameter of the second part 430 maybe 43 mm˜47 mm. More preferably, the diameter of the second part 430 maybe 44 mm˜46 mm. The observation unit 218 may further include anobservation window 440. The observation window 440 may be mounted on atop of the observation unit 218, and may be made of a transparentmaterial such as quartz, polymethyl methacrylate (PMMA), polystyrene(PS), polycarbonate (PC), etc. The user (e.g., the worker in thefactory) may observe an internal situation of the temperature fielddevice 200 through the observation window 440.

Similarly, in order to reduce heat radiation emitted from the upper ofthe temperature field device 200, circulating cooling medium channel(s)may be mounted on the first cover plate 210. Refer back to FIG. 13 , asshown in FIG. 13 , the first cover plate 210 may include a coolingmedium channel 320. A cooling manner may include liquid cooling, windcooling, gas cooling, or other manner that can achieve cooling purpose.When the liquid cooling is used, a cooling medium may flow through thecooling medium channel 320. The cooling medium may include water,ethanol, ethylene glycol, isopropanol, n-hexane or the like, or anycombination thereof. For example, the cooling medium may include a 50:50mixed liquid of water and ethanol. Through cooling medium inlets 330-1and/or 330-2, the cooling medium may flow into the circulating coolingmedium channels 340-1, 340-2, and 340-3 which are mounted inside thefirst cover plate 210. After absorbing heat dissipated from thetemperature field device 200, the cooling medium may flow out through acooling medium outlet 330-3. The flowed out cooling medium may return tothe cooling medium channel 320 through other channels, and a next cyclemay be performed. In some embodiments, diameters of the circulatingcooling medium channels 340-1, 340-2, and 340-3 may be 5 mm˜25 mm. Morepreferably, the diameters of the circulating cooling medium channels340-1, 340-2, and 340-3 may be 10 mm˜20 mm. More preferably, thediameters of the circulating cooling medium channels 340-1, 340-2, and340-3 may be 11 mm˜19 mm. More preferably, the diameters of thecirculating cooling medium channels 340-1, 340-2, and 340-3 may be 12mm˜18 mm. More preferably, the diameters of the circulating coolingmedium channels 340-1, 340-2, and 340-3 may be 13 mm˜17 mm. Morepreferably, the diameters of the circulating cooling medium channels340-1, 340-2, and 340-3 may be 14 mm˜15 mm.

In some embodiments, the first cover plate 210 may further include afifth through hole 350. For example, when the crystal growth is executedbased on the Czochralski technique, a channel (e.g., the fifth throughhole 350) for a pulling rod to enter into and/or exit from thetemperature field device 200 may be mounted on the first cover plate210. The fifth through hole 350 may mounted at a center of the firstcover plate 210. A size of the fifth through hole 350 may be determinedbased on a size of the pulling rod. In some embodiments, a shape of thefifth through hole 350 may be various. The shape of the fifth throughhole may include a regular shape such as a circle, a square, arectangle, a diamond, a regular triangle, or any other irregular shape.In some embodiments, an area of the fifth through hole 350 may be 100mm²˜3000 mm². More preferably, the area of the fifth through hole 350may be 200 mm²˜2900 mm². More preferably, the area of the fifth throughhole 350 may be 300 mm²˜2800 mm². More preferably, the area of the fifththrough hole 350 may be 400 mm²˜2700 mm². More preferably, the area ofthe fifth through hole 350 may be 500 mm²˜2600 mm². More preferably, thearea of the fifth through hole 350 may be 600 mm²˜2500 mm². Morepreferably, the area of the fifth through hole 350 may be 700 mm²˜2400mm². More preferably, the area of the fifth through hole 350 may be 800mm²˜2300 mm². More preferably, the area of the fifth through hole 350may be 900 mm²˜2200 mm². More preferably, the area of the fifth throughhole 350 may be 1000 mm²˜2100 mm². More preferably, the area of thefifth through hole 350 may be 1100 mm²˜2000 mm². More preferably, thearea of the fifth through hole 350 may be 1200 mm²˜1900 mm². Morepreferably, the area of the fifth through hole 350 may be 1300 mm²˜1800mm². More preferably, the area of the fifth through hole 350 may be 1400mm²˜1700 mm². More preferably, the area of the fifth through hole 350may be 1500 mm²˜1600 mm². When the fifth through hole 350 is a circularthrough hole, its diameter may be 25 mm˜30 mm. More preferably, thediameter of the fifth through hole 350 may be 26 mm˜29 mm. Morepreferably, the diameter of the fifth through hole 350 may be 27 mm˜28mm.

The second cover plate 212 may be mounted inside the first drum 204,cover the open end of the second drum 206 near the first cover plate210, and be connected to the second drum 206 by a welding connection, ariveting connection, a bolt connection, a bonding connection, etc. Insome embodiments, the second cover plate 212 may be made of a materialwith relatively good heat preservation performance to achieve heatpreservation and heat insulation functions. The second cover plate 212may include an alumina plate, a zirconia plate, a ceramic plate, a metalplate, etc., or a plate made of other heat resistant material such asboride, carbide, nitride, silicide, phosphide, sulfide, etc. ofrare-earth metals. In some embodiments, a diameter of the second coverplate 212 may be determined based on the inner diameter of the firstdrum 204. The second cover plate 212 may fit the inner wall of the firstdrum 204. Since one end of the second drum 206 is completely covered,the filler 208 filled between the first drum 204 and the second drum 206may be prevented from falling out and polluting the reactants in thecrucible 214. In order to observe the internal situation of thetemperature field device 200 from outside in existence of the secondcover plate 212, through holes (also referred to as sixth through holes)corresponding to the through holes (e.g., the fourth through hole310-1/310-2, the fifth through hole 350) on the first cover plate 210may be opened on the second cover plate 212. The sixth through holes mayhave same rotation central axes as the fourth through holes and thefifth through hole. That is, the sixth through holes may be opened onthe second cover plate 212 along the rotation central axes of the fourthand fifth through holes. In some embodiments, diameters of sixth throughholes corresponding to the fourth through hole 310-1/310-2 may be 8mm˜15 mm. More preferably, the diameters of the sixth through holescorresponding to the fourth through hole 310-1/310-2 may be 9 mm˜14 mm.More preferably, the diameters of the sixth through holes correspondingto the fourth through hole 310-1/310-2 may be 10 mm˜13 mm. Morepreferably, the diameters of the sixth through holes corresponding tothe fourth through hole 310-1/310-2 may be 11 mm˜12 mm. The rotationcentral axes of the sixth through holes corresponding to the fourththrough hole 310-1/310-2 may form angles of 3 degrees˜20 degrees withthe vertical line of the horizontal plane. More preferably, the rotationcentral axes of the sixth through holes corresponding to the fourththrough hole 310-1/310-2 may form angles of 5 degrees˜18 degrees withthe vertical line of the horizontal plane. More preferably, the rotationcentral axes of the sixth through holes corresponding to the fourththrough hole 310-1/310-2 may form angles of 7 degrees˜15 degrees withthe vertical line of the horizontal plane. More preferably, the rotationcentral axes of the sixth through holes corresponding to the fourththrough hole 310-1/310-2 may form angles of 9 degrees˜13 degrees withthe vertical line of the horizontal plane. More preferably, the rotationcentral axes of the sixth through holes corresponding to the fourththrough hole 310-1/310-2 may form angles of 11 degrees˜12 degrees withthe vertical line of the horizontal plane. A distance between centers ofthe sixth through holes corresponding to the fourth through hole310-1/310-2 may be 50 mm˜140 mm. More preferably, the distance betweenthe centers of the sixth through holes corresponding to the fourththrough hole 310-1/310-2 may be 60 mm˜130 mm. More preferably, thedistance between the centers of the sixth through holes corresponding tothe fourth through hole 310-1/310-2 may be 70 mm˜120 mm. Morepreferably, the distance between the centers of the sixth through holescorresponding to the fourth through hole 310-1/310-2 may be 80 mm˜110mm. More preferably, the distance between the centers of the sixththrough holes corresponding to the fourth through hole 310-1/310-2 maybe 90 mm˜100 mm. More preferably, the distance between the centers ofthe sixth through holes corresponding to the fourth through hole310-1/310-2 may be 91 mm˜99 mm. More preferably, the distance betweenthe centers of the sixth through holes corresponding to the fourththrough hole 310-1/310-2 may be 92 mm˜98 mm. More preferably, thedistance between the centers of the sixth through holes corresponding tothe fourth through hole 310-1/310-2 may be 93 mm˜97 mm. More preferably,the distance between the centers of the sixth through holescorresponding to the fourth through hole 310-1/310-2 may be 94 mm˜96 mm.In some embodiments, a diameter of a sixth through hole corresponding tothe fifth through hole may be 10 mm˜150 mm. More preferably, thediameter of the sixth through hole corresponding to the fifth throughhole may be 20 mm˜140 mm. More preferably, the diameter of the sixththrough hole corresponding to the fifth through hole may be 30 mm˜130mm. More preferably, the diameter of the sixth through holecorresponding to the fifth through hole may be 40 mm˜120 mm. Morepreferably, the diameter of the sixth through hole corresponding to thefifth through hole may be 40 mm˜110 mm. More preferably, the diameter ofthe sixth through hole corresponding to the fifth through hole may be 60mm˜100 mm. More preferably, the diameter of the sixth through holecorresponding to the fifth through hole may be 70 mm˜90 mm. Morepreferably, the diameter of the sixth through hole corresponding to thefifth through hole may be 75 mm˜85 mm. The diameter of the sixth throughhole corresponding to the fifth through hole may affect the amount ofheat dissipated through the sixth through hole, thereby affecting thetemperature gradient of the temperature field device 200. Therefore, bychanging the diameter of the sixth through hole corresponding to thefifth through hole, the temperature gradient of the temperature fielddevice 200 can be adjusted. Meanwhile, an automatic feeder (not shown)may be used at the fourth through hole 310-1/310-2 and correspondingsixth through holes, which can automatically add reactants to thecrucible 214. In this case, a concentration gradient caused by thereactants during the crystal growth process may be constant, which isbeneficial to the uniformity and consistency of the crystal growth.

In some embodiments, a thickness of the second cover plate 212 may be 20mm˜35 mm. More preferably, the thickness of the second cover plate 212may be 25 mm˜30 mm. More preferably, the thickness of the second coverplate 212 may be 26 mm˜29 mm. More preferably, the thickness of thesecond cover plate 212 may be 27 mm˜28 mm. In some embodiments, aposition of the second cover plate 212 in the temperature field device200 may be determined based on the length and the mounting position ofthe second drum 206. When the length of the second drum 206 is greaterthan a length threshold, the second cover plate 212 may be close to thefirst cover plate 210. A certain distance may be maintained between thesecond cover plate 212 and the first cover plate 210.

The sealing ring 220 and the pressure ring 222 may achieve a sealbetween the first drum 204 and the first cover plate 210. In someembodiments, the sealing ring 220 may be mounted at the joint betweenthe first drum 204 and the first cover plate 210, The sealing ring 220may be made of a material having a certain elasticity, for example,silicone or rubber. An inner diameter of the sealing ring 220 may beless than or equal to the outer diameter of the first drum 214, so thatwhen the sealing ring 220 is mounted, the sealing ring 220 may bestretched to seal effectively the space between the first drum 204 andthe first cover plate 210. In some embodiments, the inner diameter ofthe sealing ring 220 may be 170 mm˜440 mm. More preferably, the innerdiameter of the sealing ring 220 may be 200 mm˜410 mm. More preferably,the inner diameter of the sealing ring 220 may be 250 mm˜350 mm. Morepreferably, the inner diameter of the sealing ring 220 may be 260 mm˜340mm. More preferably, the inner diameter of the sealing ring 220 may be270 mm˜330 mm. More preferably, the inner diameter of the sealing ring220 may be 280 mm˜320 mm. More preferably, the inner diameter of thesealing ring 220 may be 290 mm˜310 mm. A wire diameter of the sealingring 220 may be 5 mm˜10 mm. More preferably, the wire diameter of thesealing ring 220 may be 6 mm˜9 mm. More preferably, the wire diameter ofthe sealing ring 220 may be 7 mm˜8 mm.

The pressure ring 222 may be configured to perform a fixing andcompressing function for the sealing ring 220. In some embodiments, ashape of the pressure ring 222 may be matched with that of the firstdrum 204, and an inner diameter of the pressure ring 222 may be greaterthan the outer diameter of the first drum 204. In this case, thepressure ring 222 may be nested on the first drum 204 and may bemovable.

The pressure ring 222 may include a threaded hole corresponding to thefirst cover plate 210. When the pressure ring 222 is being mounted, thesealing ring 220 may be mounted between the pressure ring 222 and thefirst cover plate 210. The pressure ring 222 may be connected to thefirst cover plate 210 by threads, thereby compressing the sealing ring220, enlarging a contact surface between the pressure ring 222 and thespace between the first drum 204 and the first cover plate 210, causingthe contact tight, and achieving the purpose of effective sealing. Insome embodiments, other items (e.g., a vacuum grease) may be used toachieve the sealing. When the sealing ring 220 is being mounted, thesealing ring 220 may be covered with the vacuum grease to achieve moreeffective sealing. In some embodiments, the pressure ring 122 and thefirst cover plate 110 may also be connected by a buckle connection. Insome embodiments, an outer diameter of the pressure ring 222 may be 200mm˜500 mm. More preferably, the outer diameter of the pressure ring 222may be 250-450 mm. More preferably, the outer diameter of the pressingring 222 may be 300 mm˜400 mm. More preferably, the outer diameter ofthe pressing ring 222 may be 310 mm˜390 mm. More preferably, the outerdiameter of the pressing ring 222 may be 320 mm˜380 mm. More preferably,the outer diameter of the pressing ring 222 may be 330 mm˜370 mm. Morepreferably, the outer diameter of the pressure ring 222 may be 340mm˜360 mm. More preferably, the outer diameter of the pressing ring 222may be 345 mm˜355 mm. An inner diameter of the pressure ring 222 may be190 mm˜460 mm. More preferably, the inner diameter of the pressure ring222 may be 220 mm˜430 mm. More preferably, the inner diameter of thepressing ring 222 may be 250 mm˜400 mm. Preferably, the inner diameterof the pressure ring 222 may be 280 mm˜420 mm. More preferably, theinner diameter of the pressing ring 222 may be 300 mm˜400 mm.Preferably, the inner diameter of the pressure ring 222 may be 310mm˜390 mm. More preferably, the inner diameter of the pressing ring 222may be 310 mm˜390 mm. Preferably, the inner diameter of the pressingring 222 may be 320 mm˜380 mm. More preferably, the inner diameter ofthe pressure ring 222 may be 330 mm˜370 mm. Preferably, the innerdiameter of the pressure ring 222 may be 340 mm˜360 mm. More preferably,the inner diameter of the pressure ring 222 may be 345 mm˜355 mm. Athickness of the pressing ring 222 may be 8 mm˜15 mm. More preferably,the thickness of the pressing ring 222 may be 10 mm˜13 mm. Morepreferably, the thickness of the pressing ring 222 may be 11 mm˜12 mm.

In some embodiments, the temperature field device 200 may furtherinclude a gas channel 224. The gas channel 224 may be mounted on theobservation unit 218, and a size of the gas channel 224 may be matchedwith that of the seventh through hole 420 to form a through tubeprotruding from the observation unit 218. In this case, the gas channel224 may be connected to a gas inlet tube and/or a gas outlet tube tointroduce the gas into the temperature field device 200.

In some embodiments, the temperature field device 200 may be applied incrystal growth. After being weighed and performed a preprocessingoperation (e.g., an operation of high-temperature baking, roomtemperature mixing, isostatic pressing) according to a reactionequation, the reactants for growing crystals may be placed in thecrucible 214 for reaction. Different crystals may require differentgrowth conditions, for example, different temperature gradients.Accordingly, the temperature gradient may be adjusted by changing anamount and a tightness of the filler 208 (e.g., the filler 208 filled inthe second drum 206) filled in the temperature field device 200. Forexample, the amount of the filler 208 may determine the relativeposition of the crucible 214 and the induction coil 216, and furtherdetermine a heating center of the temperature field. Meanwhile, thehigher the tightness of the filler 208 is, the better the heatinsulation capacity and the stability of the formed temperature fieldmay be, and the more beneficial for crystal growth may be. After theamount and the tightness of the filler 208 are determined, othercomponents may be mounted and sealed. After all the components aremounted, a gas may be introduced into the temperature field device 200,and an auxiliary component (e.g., a cooling circulation pump) may beactivated to introduce a cooling medium to the circulating coolingmedium channel(s) in the bottom plate 202 and the first cover plate 210.Then, the crystal growth apparatus (including the temperature fielddevice 200) may be activated to start the crystal growth. The gasintroduced into the temperature field device 200 may enter through oneor more fourth through holes (e.g., one or more gas channels 224). Thegas exiting from the temperature field device 200 may be dischargedthrough the remaining fourth through holes (e.g., one or more gaschannels 224), the fourth through hole(s) through which the gas isintroduced, or the fifth through hole. Through processes such as seedcrystal preheating, seeding, necking, shouldering, diameter-constantcontrol, ending, cooling, and crystal taking, the crystal growth processmay be finalized.

The crystal growth apparatus may achieve following beneficialeffects: 1. an open furnace chamber is designed to grow single crystalmaterials of various types of heat resistance oxides (e.g. YAG (yttriumaluminum garnet), LSO (lutetium oxyorthosilicate)), solving the problemthat a traditional vacuum furnace needs to firstly pump a high vacuumand secondly recharge a protecting gas, thereby improving the apparatussafety; 2. by comparing an instant weight measured through the weighingcomponent with an instant weight of a preset model and according to aspecific control algorithm, continuous signals are output to control amagnitude of the instant output power of the intermediate frequencypower supply, thereby accurately controlling the temperature in thefurnace; 3. a structure of the furnace body is simplified such thatcomponents that need maintenance and repair can be disassembled quickly,thereby reducing manufacturing and maintenance costs; 4. the operationaccuracy and stability of the apparatus is improved; and 5. an influenceof a heat convection on the stability of the weighing signals in theopen furnace body is reduced.

It should be noted that different embodiments may have differentbeneficial effects. In different embodiments, possible beneficialeffects may be any of the above effects, or any combination thereof, orany other beneficial effects that may be obtained.

The basic concepts have been described above. Obviously, for thoseskilled in the art, the detailed disclosure is merely by way of example,and does not constitute a limitation on the present disclosure. Althoughnot explicitly stated here, those skilled in the art may make variousmodifications, improvements, and amendments to the present disclosure.These alterations, improvements, and modifications are intended to besuggested by this disclosure, and are within the spirit and scope of theexemplary embodiments of this disclosure.

Moreover, certain terminology has been used to describe embodiments ofthe present disclosure. For example, the terms “one embodiment,” “anembodiment,” and/or “some embodiments” mean that a particular feature,structure or characteristic described in connection with the embodimentis included in at least one embodiment of the present disclosure.Therefore, it is emphasized and should be appreciated that two or morereferences to “an embodiment,” “one embodiment,” or “an alternativeembodiment” in various portions of this specification are notnecessarily all referring to the same embodiment. In addition, certainfeatures, structures, or characteristics in one or more embodiments ofthe present disclosure may be appropriately combined.

In addition, those skilled in the art may understand that aspects of thepresent disclosure may be illustrated and described through a number ofpatentable categories or situations, including any new and usefulprocess, machine, product or substance combination, or any new anduseful improvements to them. Accordingly, all aspects of the presentdisclosure may be performed entirely by hardware, may be performedentirely by software (including firmware, resident software, microcode,etc.), or may be performed by a combination of hardware and software.The above hardware or software can be referred to as “data block”,“module”, “engine”, “unit”, “component” or “system”. In addition,aspects of the present disclosure may manifest as a computer productlocated on one or more computer-readable media, the product includingcomputer-readable program code.

Computer storage media may contain a transmitted data signal containinga computer program code, such as on baseband or as part of a carrierwave. The transmitted signal may have multiple manifestations, includingelectromagnetic form, optical form, etc., or a suitable combinationform. A computer storage medium may be any computer-readable mediumother than a computer-readable storage medium, which may be connected toan instruction execution system, an apparatus or device to enablecommunication, propagation, or transmission of a program for use.Program code on a computer storage medium may be transmitted through anysuitable medium, including radio, cable, fiber optic cable, RF, orsimilar medium, or any combination thereof.

Computer program code for carrying out operations for aspects of thepresent disclosure may be written in any combination of one or moreprogramming languages, including an object oriented programming languagesuch as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB. NET,Python or the like, conventional procedural programming languages, suchas the “C” programming language, Visual Basic, Fortran 2003, Perl, COBOL2002, PHP, ABAP, dynamic programming languages such as Python, Ruby andGroovy, or other programming languages. The program code may executeentirely on the user's computer, partly on the user's computer, as astand-alone software package, partly on the user's computer and partlyon a remote computer or entirely on the remote computer or server. Inthe latter scenario, the remote computer may be connected to the user'scomputer through any type of network, including a local area network(LAN) or a wide area network (WAN), or the connection may be made to anexternal computer (e.g., through the Internet using an Internet ServiceProvider) or in a cloud computing environment or offered as a servicesuch as a Software as a Service (SaaS).

Furthermore, the recited order of processing elements or sequences, orthe use of numbers, letters, or other designations therefore, is notintended to limit the claimed processes and methods to any order exceptas may be specified in the claims. Although the above disclosurediscusses through various examples what is currently considered to be avariety of useful embodiments of the disclosure, it is to be understoodthat such detail is solely for that purpose, and that the appendedclaims are not limited to the disclosed embodiments, but, on thecontrary, are intended to cover modifications and equivalentarrangements that are within the spirit and scope of the disclosedembodiments. For example, although the implementation of variouscomponents described above may be embodied in a hardware device, it mayalso be implemented as a software only solution, e.g., an installing onan existing server or mobile device.

Similarly, it should be appreciated that in the foregoing description ofembodiments of the present disclosure, various features are sometimesgrouped together in a single embodiment, figure, or description thereoffor the purpose of streamlining the disclosure aiding in theunderstanding of one or more of the various embodiments. However, thisdisclosure method does not mean that the present disclosure objectrequires more features than the features mentioned in the claims.Rather, claimed subject matter may lie in less than all features of asingle foregoing disclosed embodiment.

In some embodiments, numbers expressing quantities of ingredients,properties, and so forth, used to describe and claim certain embodimentsof the application are to be understood as being modified in someinstances by the term “about,” “approximate,” or “substantially”. Unlessotherwise stated, “about,” “approximate,” or “substantially” mayindicate ±20% variation of the value it describes. Accordingly, in someembodiments, the numerical parameters set forth in the description andattached claims are approximations that may vary depending upon thedesired properties sought to be obtained by a particular embodiment. Insome embodiments, the numerical parameters should be construed in lightof a count of reported significant digits and by applying ordinaryrounding techniques. Notwithstanding that the numerical ranges andparameters configured to illustrate the broad scope of some embodimentsof the present disclosure are approximations, the numerical values inspecific examples may be as accurate as possible within a practicalscope.

Each patent, patent application, patent application publication andother materials cited herein, such as articles, books, instructions,publications, documents, etc., are hereby incorporated by reference intheir entirety. In addition to the application history documents thatare inconsistent or conflicting with the contents of the presentdisclosure, the documents that may limit the widest range of the claimof the present disclosure (currently or later attached to thisapplication) are excluded from the present disclosure. It should benoted that if the description, definition, and/or terms used in theappended application of the present disclosure is inconsistent orconflicting with the content described in the present disclosure, theuse of the description, definition and/or terms of the presentdisclosure shall prevail.

At last, it should be understood that the embodiments described in thepresent disclosure are merely illustrative of the principles of theembodiments of the present disclosure. Other modifications may be withinthe scope of the present disclosure. Accordingly, by way of example, andnot limitation, alternative configurations of embodiments of the presentdisclosure may be considered to be consistent with the teachings of thepresent disclosure. Accordingly, embodiments of the present disclosureare not limited to the embodiments that are expressly introduced anddescribed herein.

What is claimed is:
 1. A temperature field device for crystal growth,comprising: a first drum; a second drum located inside the first drum; abottom plate mounted on a bottom of the temperature field device andcovering a bottom end of the first drum; and a first cover plate mountedon a top of the temperature filed device and covering a top end of thefirst drum.
 2. The temperature field device of claim 1, wherein a heightof the second drum is smaller than a height of the first drum.
 3. Thetemperature field device of claim 1, wherein a thickness of the firstdrum is 1-15 mm.
 4. The temperature field device of claim 1, wherein aheight of the first drum is 600-1600 mm.
 5. The temperature field deviceof claim 1, wherein a thickness of the second drum is 8-30 mm.
 6. Thetemperature field device of claim 1, wherein a height of the second drumis 500-1500 mm.
 7. The temperature field device of claim 1, wherein thetemperature field device further includes a filler filled in a spacebetween the first drum and the second drum.
 8. The temperature fielddevice of claim 7, wherein a particle size of the filler is 5-200 mesh.9. The temperature field device of claim 1, wherein the temperaturefield device further includes a filler filled in the second drum. 10.The temperature field device of claim 9, wherein a filling height of thefiller is adjusted to make that a vertical distance between an upperedge of a crucible located in the second drum and an upper edge of aheater located outside the temperature field device is within 0˜∓50 mm.11. The temperature field device of claim 1, wherein a level requirementof the bottom plate is less than 0.5 mm/m, wherein the level requirementof the bottom plate refers to a height difference between two ends ofthe bottom plate per unit length.
 12. The temperature field device ofclaim 1, wherein the first cover plate includes: a first through holeconfigured to allow a gas to enter into the temperature field device;and a second through hole configured to allow the gas to exit from thetemperature field device.
 13. The temperature field device of claim 12,wherein a diameter of the first through hole or a diameter of the secondthrough hole is within 15-30 mm.
 14. The temperature field device ofclaim 12, wherein a distance between the first through hole and thesecond through hole is within 70-150 mm.
 15. The temperature fielddevice of claim 12, wherein a rotation central axis of the first throughhole or the second through hole is perpendicular to a horizontal planeor forms an angle of 3-20 degrees with a vertical line of the horizontalplane.
 16. The temperature field device of claim 12, wherein anobservation unit is mounted above the first through hole or the secondthrough hole, the observation unit including: a chamber connected withthe first through hole or the second through hole; a through holeconnected with the chamber, the through hole being configured to allowthe gas to enter into or to exit from the temperature field device; andan observation window mounted on a top of the chamber.
 17. Thetemperature field device of claim 12, further comprising a second coverplate mounted inside the first drum and covering a top end of the seconddrum, wherein the second cover plate includes two through holescorresponding to the first through hole and the second through holerespectively.
 18. The temperature field device of claim 1, furthercomprising a second cover plate mounted inside the first drum andcovering a top end of the second drum.
 19. The temperature field deviceof claim 1, wherein a concentricity among the first drum, the seconddrum, the bottom plate, and the first cover plate is less than 1 mm. 20.The temperature field device of claim 1, wherein a perpendicularityamong the first drum, the second drum, the bottom plate, and the firstcover plate is less than 0.2°.